Home - UCF/CREOL Leica EBPG5000+ Electron Beam Lithography System

UCF/CREOL Leica EBPG5000+ Electron Beam Lithography System

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E-beam Documents

Welcome, to the SharePoint website dedicated to the Leica EBPG5000+ electron beam lithography system at the College of Optics and Photonics.

The electron beam lithography system is capable of running at 20, 50 and 100 kV, with a minimum spot size of less than 10nm. The main exposure field size may range between 160um X 160um and 1mm X 1mm with a stitching value of less than 50nm. Electron-beam lithography can be performed on a variety of substrate sizes, including five inch masks, three and four inch wafers, and small pieces. A multi-substrate load lock is used to aid in the sequential processing of multiple jobs. Consistency over long write times is excellent with this system.

Please, refer to the "E-beam Policy and Guidelines" document which can be found under the Documents folder for general information and job submission requirements. For any further e-beam related questions or problems please contact Dr. Ivan Divliansky at: ibd1@creol.ucf.edu

E-beam Policy and Guidelines

Ivan Divliansky

UCF E-Beam Fees

Ivan Divliansky

Dose_Layout Job Submission Form

Ivan Divliansky

Direct_Write Job Submission Form

Ivan Divliansky

Leica EBPG 5000+ General Documents

Deon Frank

Standard Operating Procedures (Univ. of California, Irvine)

Deon Frank


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Demo Pictures

Thumbnail	Name	Picture Size
	Bolometer_alignment	640 x 480
	cross_hatched_lines	300 x 300
	Sub-50nm junction	1024 x 800
	Junctions_1	2048 x 1536

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Announcements

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Links

	Cornell Nano Fab Facility
	Penn State NanoFab
	Stanford NanoFab
	Resist Processing


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